AT27BV512-70RI Atmel, AT27BV512-70RI Datasheet - Page 10

IC OTP 512KBIT 70NS 28SOIC

AT27BV512-70RI

Manufacturer Part Number
AT27BV512-70RI
Description
IC OTP 512KBIT 70NS 28SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT27BV512-70RI

Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
512K (64K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (8.69mm width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT27BV51270RI
18. Rapid Programming Algorithm
A 100 µs CE pulse width is used to program. The address is set to the first location. V
is
CC
raised to 6.5V and OE/V
is raised to 13.0V. Each address is first programmed with one
PP
100 µs CE pulse without verification. Then a verification/reprogramming loop is executed for
each address. In the event a byte fails to pass verification, up to 10 successive 100 µs pulses
are applied with a verification after each pulse. If the byte fails to verify after 10 pulses have
been applied, the part is considered failed. After the byte verifies properly, the next address is
selected until all have been checked. OE/V
is then lowered to V
and V
to 5.0V. All bytes
PP
IL
CC
are read again and compared with the original data to determine if the device passes or fails.
AT27BV512
10
0602E–EPROM–12/07

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