AT45DB011D-SSH-B Atmel, AT45DB011D-SSH-B Datasheet - Page 27

• Manufacturer Part Number: AT45DB011D-SSH-B
• Description: IC FLASH 1MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB011D-SSH-B

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 1M (512 pages x 264 bytes)
• Speed: 66MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Data Bus Width: 8 bit
• Architecture: Sectored
• Interface Type: SPI Serial
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 25 mA
• Mounting Style: SMD/SMT
• Organization: 32 KB x 4
• Memory Configuration: 512 Pages X 264 Bytes
• Clock Frequency: 66MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

14.2
3639H–DFLASH–04/09
Operation Mode Summary
The commands described previously can be grouped into four different categories to better
describe which commands can be executed at what times.
Group A commands consist of:
Group B commands consist of:
Group C commands consist of:
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands 1 through 4, any command in Group C can be executed. During the internally self-
timed portion of Group B commands 5 through 10, only Group C commands 3 and 4 can be exe-
cuted. Finally, during the internally self-timed portion of a Group D command, only the Status
Register Read command should be executed.
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer Transfer
6. Main Memory Page to Buffer Compare
7. Buffer to Main Memory Page Program with Built-in Erase
8. Buffer to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer
10. Auto Page Rewrite
1. Buffer Read
2. Buffer Write
3. Status Register Read
4. Manufacturer and Device ID Read
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
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