MT29F4G16BABWP Micron Technology Inc, MT29F4G16BABWP Datasheet - Page 11
MT29F4G16BABWP
Manufacturer Part Number
MT29F4G16BABWP
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F2G08AAAWP.pdf
(57 pages)
Specifications of MT29F4G16BABWP
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (256M x 16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
557-1154-2
- Current page: 11 of 57
- Download datasheet (2Mb)
Figure 5:
Figure 6:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
(4Gb: 3FFC0000h)
(4Gb: 1FFE0000h)
(4Gb: 3FFFF83Fh)
(4Gb: 1FFFFC1Fh)
Memory Map x8
Memory Map x16
00080000h
00040000h
0040000h
0020000h
1FFC0000h
0007F83Fh
0003F83Fh
005F41Fh
003F41Fh
001F41Fh
000BF83Fh
FFE0000h
1FFFF83Fh
FFFF41Fh
Note:
0
0
A27 (4Gb: A28)
A28 (4Gb: A29)
Block address and page address = actual page address.
Block Address
Block Address
A1 7
A18
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
A1 6
11
A1 7
Page Address within a block
Page Address within a block
page 63-0
page 63-0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A1 1
A1 2
A1 0
A1 0
A1 1
A1 1
Column Address within a page
©2004 Micron Technology, Inc. All rights reserved.
Spare Address within a page
Spare Address within a page
Column Address
Addressing
A4
A5
A0
A0
A0
A0
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