MT45W4MW16BCGB-701 WT TR Micron Technology Inc, MT45W4MW16BCGB-701 WT TR Datasheet - Page 50
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MT45W4MW16BCGB-701 WT TR
Manufacturer Part Number
MT45W4MW16BCGB-701 WT TR
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BCGB-701_IT.pdf
(69 pages)
Specifications of MT45W4MW16BCGB-701 WT TR
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 37:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IL
IH
IL
IL
IH
IL
IL
IH
IL
IH
IL
OH
OL
OH
OL
High-Z
READ Burst Suspend
Valid address
t CSP
t SP
t SP
t SP
t SP
Notes:
t HD
High-Z
t HD
t HD
1. Nondefault BCR settings for READ burst suspend: fixed or variable latency; latency code 2 (3
2. CLK can be stopped LOW or HIGH but must be static, with no LOW-to-HIGH transitions dur-
3. OE# can stay LOW during burst suspend. If OE# is LOW, DQ[15:0] will continue to output
t OLZ
clocks); WAIT active LOW; WAIT asserted during delay.
ing burst suspend.
valid data.
t ACLK
t BOE
t CLK
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Valid output
t KOH
Valid output
Valid output
t CEM
50
Valid output
t OHZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Note 3
t OLZ
Note 2
t BOE
output
Valid
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
Timing Diagrams
output
Valid
t HD
t OHZ
t HZ
t CBPH
High-Z
Undefined
Valid address