MT45W4MW16BCGB-708 WT Micron Technology Inc, MT45W4MW16BCGB-708 WT Datasheet - Page 8
![IC PSRAM 64MBIT 70NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BCGB-708 WT
Manufacturer Part Number
MT45W4MW16BCGB-708 WT
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BCGB-701_IT.pdf
(69 pages)
Specifications of MT45W4MW16BCGB-708 WT
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 2:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Mode
Read
Write
Standby
No operation
Configuration
register write
Configuration
register read
DPD
Bus Operations – Asynchronous Mode (BCR[15] = 1; Default)
Deep power-down
Notes:
Standby
Power
Active
Active
Active
Active
Idle
1. CLK must be LOW during asynchronous read and asynchronous write modes and to achieve
2. The WAIT polarity is configured through the bus configuration register (BCR[10]).
3. When LB# and UB# are in select mode (LOW), DQ[15:0] are enabled. When only LB# is in
standby power during standby and DPD modes. CLK must be static (HIGH or LOW) during
burst suspend.
select mode, DQ[7:0] are enabled. When only UB# is in the select mode, DQ[15:8] are
enabled.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
CLK
L
L
L
L
L
L
L
1
ADV#
X
X
X
L
L
L
L
CE#
H
H
L
L
L
L
L
8
OE#
X
X
X
H
X
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WE#
H
H
X
X
X
L
L
CRE
H
H
X
L
L
L
L
LB#/
UB#
X
X
X
X
L
L
L
WAIT
High-Z
High-Z
Low-Z
Low-Z
Low-Z
Low-Z
Low-Z
General Description
©2005 Micron Technology, Inc. All rights reserved.
2
DQ[15:0]
Data-out
reg. out
Data-in
Config.
High-Z
High-Z
High-Z
X
3
Notes
5, 6
4, 6
4
7
4