MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 58

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 35:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
ADDR
DQS
DM
CK#
CKE
DQ
CK
Power-Down Mode (Active or Precharge)
Notes:
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V ALID 1
IS
IS
IS
V ALI D
T0
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IH
IH
IH
1. If this command is a PRECHARGE (or if the device is already in the idle state), then the
2. No column accesses are allowed to be in progress at the time power-down is entered.
3. There must be at least one clock pulse during
t
CK
power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at
least one row is already active), then the power-down mode shown is active power-down.
Powe r -Dow n
Enter 2
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IS
NOP
T1
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CH
Must not exceed Refresh device limits
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T a 0
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Powe r -Dow n
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XP time.
Mode
Exit 3
T a 1
NOP
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XP
NOP
©2004 Micron Technology, Inc. All rights reserved.
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Timing Diagrams
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DON’T CARE
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