MT47H64M8CB-37E IT:B Micron Technology Inc, MT47H64M8CB-37E IT:B Datasheet - Page 13

• Manufacturer Part Number: MT47H64M8CB-37E IT:B
• Description: IC DDR2 SDRAM 512MBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8CB-37E IT:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3.75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 145mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 4: 64 Meg x 8 Functional Block Diagram
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
BA0, BA1
A0–A13,
RAS#
CAS#
WE#
ODT
CKE
CK#
CS#
CK
16
Address
register
registers
Control
Mode
logic
16
counter
Refresh
14
10
2
14
2
address
Row-
MUX
control
Column-
counter/
address
Bank
logic
latch
14
latch and
decoder
address
Bank 0
row-
Bank 1
Bank 2
Bank 3
8
2
16,384
DM mask logic
(16,384 x 256 x 32)
I/O gating
Sense amplifiers
Column
decoder
8,192
Memory
(x32)
256
Bank 0
array
Bank 1
Bank 2
Bank 3
internal
CK, CK#
COL0, COL1
32
13
32
32
Read
latch
CK out
drivers
Write
FIFO
CK in
and
8
8
8
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
COL0, COL1
Mask
Data
MUX
32
4
generator
512Mb: x4, x8, x16 DDR2 SDRAM
1
1
1
1
8
8
8
8
DQS
registers
Input
Data
8
1
1
1
1
8
8
8
8
DQS, DQS#
2
1
8
Functional Block Diagrams
CK, CK#
DRVRS
DLL
RCVRS
2
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
© 2004 Micron Technology, Inc. All rights reserved.
ODT control
R2
R2
R2
R2
R2
R2
VssQ
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
VddQ
RDQS
DM
DQ0–DQ7
DQS, DQS#
RDQS#