MT46V64M4P-6T:GTR Micron Technology Inc, MT46V64M4P-6T:GTR Datasheet - Page 63
MT46V64M4P-6T:GTR
Manufacturer Part Number
MT46V64M4P-6T:GTR
Description
IC DDR SDRAM 256MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V64M4P-6T:GTR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (64Mx4)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 63 of 93
- Download datasheet (4Mb)
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Data from any READ burst may be truncated with a BURST TERMINATE command, as
shown in Figure 31 on page 66. The BURST TERMINATE latency is equal to the CL, that
is, the BURST TERMINATE command should be issued x cycles after the READ
command where x equals the number of desired data element pairs (pairs are required
by the 2n-prefetch architecture).
Data from any READ burst must be completed or truncated before a subsequent WRITE
command can be issued. If truncation is necessary, the BURST TERMINATE command
must be used, as shown in Figure 32 on page 67. The
t
defined in the section on WRITEs.) A READ burst may be followed by, or truncated with,
a PRECHARGE command to the same bank provided that auto precharge was not acti-
vated.
The PRECHARGE command should be issued x cycles after the READ command, where
x equals the number of desired data element pairs (pairs are required by the 2n-prefetch
architecture). This is shown in Figure 33 on page 68. Following the PRECHARGE
command, a subsequent command to the same bank cannot be issued until both
and
last data elements.
DQSS (MAX) case has a longer bus idle time. (
t
RP have been met. Part of the row precharge time is hidden during the access of the
61
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSS [MIN] and
256Mb: x4, x8, x16 DDR SDRAM
t
DQSS (NOM) case is shown; the
©2003 Micron Technology, Inc. All rights reserved.
t
DQSS [MAX] are
Operations
t
RAS
Related parts for MT46V64M4P-6T:GTR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
IC DDR SDRAM 256MBIT 5NS 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC DDR SDRAM 256MBIT 5NS 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 256MB 200MHZ 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 256MB 167MHZ 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 5.5NS 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 200MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 90VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 128MBIT 167MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet: