MT45W4MW16BFB-856 WT Micron Technology Inc, MT45W4MW16BFB-856 WT Datasheet - Page 37
![IC PSRAM 64MBIT 85NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BFB-856 WT
Manufacturer Part Number
MT45W4MW16BFB-856 WT
Description
IC PSRAM 64MBIT 85NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BBB-706_WT_TR.pdf
(61 pages)
Specifications of MT45W4MW16BFB-856 WT
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Timing Diagrams
Figure 26:
Table 18:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Initialization Period (required before normal operations)
Initialization Timing Parameters
Initialization Period
Vcc, VccQ = 1.70V
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
37
t
PU
Symbol
t
PU
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
-70x
normal operation
Device ready for
Max
150
Vcc (MIN)
©2003 Micron Technology, Inc. All rights reserved.
Min
Timing Diagrams
-856
Max
150
Units
µs
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