MT45W4MW16BFB-856 WT F Micron Technology Inc, MT45W4MW16BFB-856 WT F Datasheet - Page 20
MT45W4MW16BFB-856 WT F
Manufacturer Part Number
MT45W4MW16BFB-856 WT F
Description
IC PSRAM 64MBIT 85NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BBB-706_WT_TR.pdf
(61 pages)
Specifications of MT45W4MW16BFB-856 WT F
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Figure 16:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Read Configuration Register
Notes: 1. The WRITE on the third cycle must be CE#-controlled.
ADDRESS
LB#/UB#
2. CE# must be HIGH for 150ns before performing the cycle that reads a configuration regis-
DATA
WE#
OE#
CE#
ter.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
ADDRESS
XXXXh
(MAX)
READ
ADDRESS
(MAX)
XXXXh
READ
20
RCR: 0000h
BCR: 0001h
ADDRESS
WRITE
(MAX)
1
NOTE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
ADDRESS
READ
(MAX)
DON'T CARE
CR VALUE
OUT
Configuration Registers
©2003 Micron Technology, Inc. All rights reserved.
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