MT46V16M16P-6T:F Micron Technology Inc, MT46V16M16P-6T:F Datasheet - Page 67
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MT46V16M16P-6T:F
Manufacturer Part Number
MT46V16M16P-6T:F
Description
IC DDR SDRAM 256MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16P-6T:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V16M16P-6T:F
Manufacturer:
HYNIX
Quantity:
1 000
Part Number:
MT46V16M16P-6T:F
Manufacturer:
MT
Quantity:
20 000
Figure 30:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Command
Command
Address
Address
Address
Random READ Accesses
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank,
READ
Col n
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
T0
1. DO n (or x or b or g) = data-out from column n (or column x or column b or column g).
2. BL = 2, BL = 4, or BL = 8 (if BL = 4 or BL = 8, the following burst interrupts the previous).
3. n', x', b', or g' indicate the next data-out following DO n, DO x, DO b, or DO g, respectively.
4. READs are to an active row in any bank.
5. Shown with nominal
CL = 2
Bank,
Col x
Bank,
READ
READ
READ
Bank,
Col x
Col x
T1
T1
T1
CL = 2.5
CL = 3
T2
t
AC,
Bank,
Col b
READ
READ
READ
Bank,
Bank,
Col b
Col b
T2n
T2
T2
t
DQSCK, and
DO
65
n
T2n
T3
DO
DO
n'
n
Bank,
Col g
Bank,
Col g
T3n
READ
READ
Bank,
READ
Col g
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
DO
DO
DO
n'
n
x
T3n
T3n
T4
Transitioning Data
256Mb: x4, x8, x16 DDR SDRAM
DO
DO
DO
n'
x'
x
T4n
T4
NOP
T4
NOP
NOP
DO
DO
DO
x
x'
b
T4n
T4n
T5
DO
x'
DO
DO
b'
©2003 Micron Technology, Inc. All rights reserved.
b
T5n
T5
T5
NOP
NOP
NOP
DO
Don’t Care
DO
DO
b'
b
g
T5n
T5n
DO
Operations
b'