MT46V32M8BG-75:G TR Micron Technology Inc, MT46V32M8BG-75:G TR Datasheet - Page 69
![IC DDR SDRAM 256MBIT 60FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT46V32M8BG-75:G TR
Manufacturer Part Number
MT46V32M8BG-75:G TR
Description
IC DDR SDRAM 256MBIT 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V32M8BG-75:G TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (32M x 8)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 32:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Command
Command
Address
Address
Address
READ-to-WRITE
DQS
DQS
DQS
CK#
CK#
CK#
DM
DM
DM
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank a,
READ
Bank,
READ
Bank,
READ
Col n
Col n
Col n
T0
T0
T0
1. Page remains open.
2. DO n = data-out from column n; DI b = data-in from column b.
3. BL = 4 (applies for bursts of 8 as well; if BL = 2, the BURST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
CL = 2
BST
BST
BST
T1
T1
T1
CL = 2.5
1
1
1
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
DO
n
67
T2n
T2n
DO
n
WRITE
NOP
Bank,
Col b
T3
T3
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(NOM)
t
DQSS
DQSQ.
DO
n
T3n
T3n
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
WRITE
Bank,
WRITE
Col b
T4
T4
T4
NOP
DI
b
t
(NOM)
DQSS
t
(NOM)
DQSS
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
T5
T5
DI
NOP
NOP
DI
NOP
b
b
Don’t Care
T5n
T5n
T5n
Operations
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