MT46V32M8FG-75E:G Micron Technology Inc, MT46V32M8FG-75E:G Datasheet - Page 59
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MT46V32M8FG-75E:G
Manufacturer Part Number
MT46V32M8FG-75E:G
Description
IC DDR SDRAM 256MBIT 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V32M8FG-75E:G
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (32M x 8)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V32M8FG-75E:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46V32M8FG-75E:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
CAS Latency (CL)
Figure 24:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
CAS Latency
Note:
The CL is the delay, in clock cycles, between the registration of a READ command and
the availability of the first bit of output data. The latency can be set to 2, 2.5, or 3 (-5B
only) clocks, as shown in Figure 24. Reserved states should not be used, as unknown
operation or incompatibility with future versions may result.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available nominally coincident with clock edge n + m. Table 35 on page 58 indi-
cates the operating frequencies at which each CL setting can be used.
Command
Command
Command
BL = 4 in the cases shown; shown with nominal
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
READ
READ
READ
T0
T0
T0
CL = 2
CL = 3
CL = 2.5
NOP
NOP
NOP
T1
T1
T1
57
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
NOP
NOP
T2
T2
T2
256Mb: x4, x8, x16 DDR SDRAM
T2n
T2n
t
AC,
t
DQSCK, and
NOP
NOP
NOP
T3
T3
T3
Don’t Care
T3n
T3n
T3n
©2003 Micron Technology, Inc. All rights reserved.
t
DQSQ.
Operations