MT47H32M8BP-37V:B Micron Technology Inc, MT47H32M8BP-37V:B Datasheet - Page 106
MT47H32M8BP-37V:B
Manufacturer Part Number
MT47H32M8BP-37V:B
Description
IC DDR2 SDRAM 256MBIT 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H16M16BG-3B_TR.pdf
(128 pages)
Specifications of MT47H32M8BP-37V:B
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
256M (32M x 8)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M8BP-37V:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 63: Bank Write – with Auto Precharge
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
DQS, DQS#
Command
Bank select
Address
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
t CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 and AL = 0 in the case shown.
3. Enable auto precharge.
4. WR is programmed via MR9–MR11 and is calculated by dividing
5. Subsequent rising DQS signals must align to the clock within
6. DI n = data-in from column n; subsequent elements are applied in the programmed order.
7.
8.
these times.
rounding up to the next integer value.
t
t
DSH is applicable during
DSS is applicable during
t RCD
NOP 1
T2
t CH
t CL
WRITE 2
Bank x
Col n
3
T3
WL ± t DQSS (NOM)
WL = 2
NOP 1
t
106
T4
t
DQSS (MAX) and is referenced from CK T6 or T7.
DQSS (MIN) and is referenced from CK T5 or T6.
t WPRE
NOP 1
T5
DI
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
t RAS
256Mb: x4, x8, x16 DDR2 SDRAM
T5n
t DQSL t DQSH t WPST
NOP 1
5
T6
T6n
Transitioning Data
NOP 1
T7
©2003 Micron Technology, Inc. All rights reserved.
t
DQSS.
t
WR (in ns) by
NOP 1
WR 4
T8
Don’t Care
NOP 1
t
T9
CK and
WRITE
t RP
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