MT48V8M16LFF4-10 IT:G Micron Technology Inc, MT48V8M16LFF4-10 IT:G Datasheet - Page 34

• Manufacturer Part Number: MT48V8M16LFF4-10 IT:G
• Description: IC SDRAM 128MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48V8M16LFF4-10 IT:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 19:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
Terminating a READ Burst
Notes:
COMMAND
COMMAND
1. Page remains open after a BURST TERMINATE command.
2. N + 3 is either the last data element of BL = 4 or the last desired data element of a longer
3. DQM is LOW.
COMMAND
ADDRESS
ADDRESS
ADDRESS
burst.
CLK
CLK
CLK
DQ
DQ
DQ
BANK,
BANK,
COL n
COL n
T0
T0
T0
BANK,
COL n
READ
READ
READ
CL = 1
CL = 2
T1
T1
T1
NOP
NOP
NOP
D
OUT
CL = 3
n
T2
T2
T2
NOP
NOP
NOP
34
D
D
n + 1
OUT
OUT
n
T3
T3
T3
NOP
NOP
NOP
D
n + 2
D
D
n + 1
OUT
OUT
OUT
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TRANSITIONING DATA
TERMINATE
TERMINATE
TERMINATE
T4
BURST
T4
BURST
T4
BURST
X = 0 cycles
X = 1 cycle
D
D
n + 2
n + 3
D
n + 1
OUT
OUT
128Mb: x16, x32 Mobile SDRAM
OUT
X = 2 cycles
T5
T5
T5
NOP
NOP
NOP
D
n + 3
D
n + 2
OUT
OUT
T6
T6
T6
NOP
NOP
NOP
D
n + 3
OUT
©2001 Micron Technology, Inc. All rights reserved.
DON’T CARE
T7
NOP
READs