MT47H64M8B6-25E IT:D TR Micron Technology Inc, MT47H64M8B6-25E IT:D TR Datasheet - Page 21

• Manufacturer Part Number: MT47H64M8B6-25E IT:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8B6-25E IT:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 6: Temperature Limits
Figure 10: Example Temperature Test Point Location
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Parameter
Storage temperature
Operating temperature: commercial
Operating temperature: industrial
Operating temperature: automotive
Notes:
Test point
1. MAX storage case temperature T
2. MAX operating case temperature T
3. Device functionality is not guaranteed if the device exceeds maximum T
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
in Figure 10. This case temperature limit is allowed to be exceeded briefly during pack-
age reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering
Parameters.”
in Figure 10.
operation.
Lmm x Wmm FBGA
Width (W)
0.5 (W)
Electrical Specifications – Absolute Ratings
Symbol
0.5 (L)
21
T
T
T
T
T
T
Length (L)
STG
C
C
A
C
A
STG
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package, as shown
is measured in the center of the package, as shown
Min
512Mb: x4, x8, x16 DDR2 SDRAM
–55
–40
–40
–40
–40
0
Max
150
105
105
85
95
85
©2004 Micron Technology, Inc. All rights reserved.
Units
°C
°C
°C
°C
°C
°C
C
during
2, 3 , 4
Notes
2, 3, 4
2, 3
4, 5
4, 5
1