IS42S16100C1-5T ISSI, Integrated Silicon Solution Inc, IS42S16100C1-5T Datasheet - Page 33
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IS42S16100C1-5T
Manufacturer Part Number
IS42S16100C1-5T
Description
IC SDRAM 16MBIT 200MHZ 50TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S16100C1-7TL.pdf
(81 pages)
Specifications of IS42S16100C1-5T
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
16M (1M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
50-TSOPII
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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IS42S16100C1
Read Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42S16100C1 can output data continuously from
the burst start address (a) to location a+255 during a
read cycle in which the burst length is set to full page.
The IS42S16100C1 repeats the operation starting at
the 256th cycle with the data output returning to location
(a) and continuing with a+1, a+2, a+3, etc. A burst stop
command must be executed to terminate this cycle. A
precharge command must be executed within the ACT
to PRE command period (t
stop command.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
08/24/09
CAS latency = 3, burstlength = 4
CAS latency = 2, burstlength = 4
COMMAND
COMMAND
CLK
CLK
DQ
DQ
READ (CA=A, BANK 0)
READ (CA=A, BANK 0)
READ A0
READ A0
ras
max.) following the burst
D
OUT
A0 D
D
OUT
OUT
A0
A0 D
After the period (t
stop following the execution of the burst stop command
has elapsed, the outputs go to the HIGH impedance
state. This period (t
CAS latency is two and three clock cycle when the CAS
latency is three.
D
OUT
OUT
CAS Latency
A1
A0
BURST STOP
BURST STOP
t
rbd
D
D
OUT
OUT
BST
BST
A2
A1
rbd
rbd
) required for burst data output to
t
RBD
) is two clock cycle when the
D
D
OUT
OUT
t
RBD
A3
A2
3
3
D
OUT
HI-Z
A3
HI-Z
2
2
33
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