IS42S16100C1-6TL ISSI, Integrated Silicon Solution Inc, IS42S16100C1-6TL Datasheet - Page 67

• Manufacturer Part Number: IS42S16100C1-6TL
• Description: IC SDRAM 16MBIT 166MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100C1-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 50-TSOPII
• Organization: 1Mx16
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S16100C1
Write Cycle / Ping-Pong Operation (Bank Switching)
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
08/24/09
CAS latency = 3, burst length = 4
A0-A9
DQM
CKE
RAS
CAS
CLK
A10
A11
WE
DQ
CS
t
CKS
t
CS
T0
t
t
t
t
t
t
t
CS
CS
CS
t
t
AS
AS
AS
CKA
CH
CK
<
BANK 0
ACT 0
ROW
ROW
T1
(BANK 0 TO 1)
t
CHI
>
(BANK 0)
(BANK 0)
(BANK 0)
t
t
t
t
t
RRD
RCD
t
t
t
t
RAS
t
AH
AH
CH
CH
CH
AH
RC
T2
t
CL
T3
t
t
DS
CS
<
AUTO PRE
<
COLUMN
NO PRE
WRITA 0
BANK 0
WRIT 0
T4
D
IN
0m
t
(1)
DH
>
>
t
DS
<
BANK 1
ACT 1
ROW
ROW
D
T5
IN
0m+1
t
>
DH
(BANK 1)
(BANK 1)
(BANK 1)
t
t
t
RAS
RCD
RC
t
DS
D
T6
IN
0m+2
t
DH
t
DS
D
T7
IN
0m+3
t
DH
(BANK 0)
t
DPL
t
DS
<
AUTO PRE
<
COLUMN
NO PRE
WRITA 1
BANK 1
WRIT 1
T8
D
IN
t
1m
DH
(1)
>
>
t
DS
BANK 0 OR 1
<
BANK 0
D
PRE 0
T9
IN
1m+1
t
DH
>
(BANK 0)
t
RP
t
DS
T10
D
IN
1m+2
t
DH
t
DS
T11
D
IN
1m+3
t
DH
t
CH
T12
Undefined
<
Don't Care
BANK 1
BANK 0
ACT 0
ROW
ROW
>
t
t
t
t
DPL
RCD
RAS
RC
67