IS42S16100C1-7BL-TR ISSI, Integrated Silicon Solution Inc, IS42S16100C1-7BL-TR Datasheet - Page 48

• Manufacturer Part Number: IS42S16100C1-7BL-TR
• Description: IC SDRAM 16MBIT 143MHZ 60BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100C1-7BL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-BGA
• Organization: 1Mx16
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

48
IS42S16100C1
Note 1: A8,A9 = Don’t Care.
Write Cycle / Ping-Pong Operation
CAS latency = 2, burst length = 2
A0-A9
DQM
CKE
RAS
CAS
CLK
A10
A11
WE
DQ
CS
t
CKS
t
CS
T0
t
t
t
t
t
t
t
CS
CS
CS
t
t
AS
AS
AS
CKA
CH
CK
<
BANK 0
ACT 0
ROW
ROW
T1
(BANK 0 TO 1)
t
CHI
>
(BANK 0)
(BANK 0)
(BANK 0)
t
t
t
t
t
RCD
t
t
t
t
RRD
RAS
t
AH
AH
CH
CH
CH
AH
RC
T2
t
CL
t
t
CS
DS
<
AUTO PRE
<
COLUMN
WRITA 0
NO PRE
WRIT 0
BANK 0
D
T3
IN
0m
t
(1)
DH
>
>
t
DS
<
BANK 1
ACT 1
ROW
ROW
T4
D
IN
0m+1
t
>
DH
(BANK 1)
(BANK 1)
(BANK 1)
t
t
RCD
RAS
t
RC
t
DS
D
T5
IN
0m+2
t
DH
t
DS
Integrated Silicon Solution, Inc. — www.issi.com
D
T6
IN
0m+3
t
DH
t
DPL
t
DS
<
AUTO PRE
<
WRITA 1
NO PRE
COLUMN
BANK 1
WRIT 1
T7
D
IN
t
1m
(1)
DH
>
>
t
DS
BANK 0 OR 1
<
BANK 0
PRE 0
D
T8
IN
1m+1
t
DH
>
(BANK 0)
t
RP
t
DS
D
T9
IN
1m+2
t
DH
t
DS
T10
<
BANK 0
ACT 0
D
ROW
ROW
Undefined
IN
Don't Care
1m+3
t
>
DH
(BANK 0)
(BANK 0)
(BANK 0)
t
t
t
RCD
RAS
DPL
t
RC
t
CH
08/24/09
Rev. F