IS42S16100C1-7TI ISSI, Integrated Silicon Solution Inc, IS42S16100C1-7TI Datasheet - Page 36

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IS42S16100C1-7TI

Manufacturer Part Number
IS42S16100C1-7TI
Description
IC SDRAM 16MBIT 143MHZ 50TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S16100C1-7TI

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
16M (1M x 16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
50-TSOPII
Organization
1Mx16
Density
16Mb
Address Bus
12b
Access Time (max)
6/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
50
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S16100C1-7TI
Manufacturer:
ISSI
Quantity:
8 831
36
IS42S16100C1
Bank Active Command Interval
When the selected bank is precharged, the period trp
has elapsed and the bank has entered the idle state,
the bank can be activated by executing the active
command. If the other bank is in the idle state at that
time, the active command can be executed for that bank
after the period t
banks will be in the active state. When a bank active
command has been executed, a precharge command
must be executed for
Clock Suspend
When the CKE pin is dropped from HIGH to LOW during
a read or write cycle, the IS42S16100C1 enters clock
suspend mode on the next CLK rising edge.This command
reduces the device power dissipation by stopping the
device internal clock. Clock suspend mode continues as
long as the CKE pin remains low. In this state, all inputs
other than CKE pin are invalid and no other commands
can be executed. Also, the device internal states are
maintained. When the CKE pin goes from LOW to HIGH
clock suspend mode is terminated on the next CLK rising
edge and device operation resumes.
CAS latency = 3
CAS latency = 2, burstlength = 4
COMMAND
COMMAND
COMMAND
rrd
CLK
CLK
has elapsed. At that point both
CKE
CLK
BANK ACTIVE (BANK 0)
BANK ACTIVE (BANK 0)
DQ
ACT 0
ACT 0
READ (BANK 0)
READ 0
t
t
RRD
RCD
D
OUT
CLOCK SUSPEND
BANK ACTIVE (BANK 1)
BANK ACTIVE (BANK 0)
0
READ 0
ACT 1
that bank within the ACT to PRE command period (t
Also note that a precharge command cannot be executed
for an active bank before t
After a bank active command has been executed and
the trcd period has elapsed, read write (including auto-
precharge) commands can be executed for that bank.
The next command cannot be executed until the recovery
period (t
Since this command differs from the self-refresh command
described previously in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tref). Thus
the maximum time that clock suspend mode can be held
is just under the refresh cycle time.
Integrated Silicon Solution, Inc. — www.issi.com
D
OUT
cka
) has elapsed.
1
D
OUT
ras
2
(min) has elapsed.
D
OUT
3
ras
08/24/09
max).
Rev. F

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