IS42S16400D-6T-TR ISSI, Integrated Silicon Solution Inc, IS42S16400D-6T-TR Datasheet - Page 15

• Manufacturer Part Number: IS42S16400D-6T-TR
• Description: IC SDRAM 64MBIT 166MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S16400D-6T-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S16400D
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
AC TEST CONDITIONS
Input Load
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
11/21/07
SYMBOL
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OUTPUT
CCD
CKED
PED
DQD
DQM
DQZ
DWD
DAL
DPL
BDL
CDL
RDL
MRD
ROH
INPUT
CLK
2.0V
1.4V
0.8V
2.0V
1.4V
0.8V
PARAMETER
Clock Cycle Time
Operating Frequency
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command
to ACTIVE or REFRESH command
Data-out to high-impedance from
PRECHARGE command
t
OH
t
CS
1.4V
t
CH
t
CHI
(Input/Output Reference Level: 1.4V)
t
AC
t
CK
t
CL
1.4V
CL = 3
CL = 2
Output Load
I/O
166
-6
6
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
50 pF
143
-7
50
7
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
+1.5V
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
15