MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 11
![IC DDR SDRAM 256MBIT 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT46H8M32LFB5-6:A TR
Manufacturer Part Number
MT46H8M32LFB5-6:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M32LFB5-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1280-2
MT46H8M32LFB5-6:A TR
MT46H8M32LFB5-6:A TR
Ball Assignments and Descriptions
Figure 4: 60-Ball VFBGA – 8mm x 9mm (Top View)
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Note:
A
B
C
D
E
F
G
H
J
K
1. D9 is a test pin that must be tied to V
V
V
V
V
CKE
V
V
V
A9
A6
1
DDQ
DDQ
SSQ
SSQ
SS
SS
SS
DQ15
DQ13
DQ11
UDQS
UDM
DQ9
A11
CK
A7
A4
2
DQ14
DQ12
DQ10
V
DQ8
CK#
A12
NC
A8
A5
3
SSQ
11
4
256Mb: x16, x32 Mobile LPDDR SDRAM
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SS
Ball Assignments and Descriptions
or V
6
SSQ
in normal operations.
A10/AP
V
WE#
DQ1
DQ3
DQ5
DQ7
CS#
NC
A2
DDQ
7
LDQS
CAS#
LDM
DQ0
DQ2
DQ4
DQ6
BA0
A0
A3
8
©2008 Micron Technology, Inc. All rights reserved.
TEST
V
V
RAS#
V
V
V
BA1
V
A1
DDQ
DDQ
9
SSQ
DD
DD
DD
1