MT48H16M32LFCM-75:A TR Micron Technology Inc, MT48H16M32LFCM-75:A TR Datasheet - Page 66
![IC SDRAM 512MBIT 133MHZ 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT48H16M32LFCM-75:A TR
Manufacturer Part Number
MT48H16M32LFCM-75:A TR
Description
IC SDRAM 512MBIT 133MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H16M32LFCM-75_ITA_TR.pdf
(73 pages)
Specifications of MT48H16M32LFCM-75:A TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (16M x 32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1330-2
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Figure 49:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
COMMAND
BA0, BA1
ADDR
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
WRITE – With Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, BL = 4.
2. There must be one
ENABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m
WRITE
BANK
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
T3
IN
NOP
m + 1
t DH
t
CK during the
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t DS
D
IN
T4
NOP
m + 2
t DH
66
t DS
t
D
WR time for WRITE auto precharge.
T5
NOP
IN
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
T6
NOP
2
NOP
T7
©2005 Micron Technology, Inc. All rights reserved.
t RP
Timing Diagrams
NOP
T8
ACTIVE
ROW
ROW
BANK
T9
DON’T CARE
UNDEFINED
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