MT41J128M8HX-15E:D TR Micron Technology Inc, MT41J128M8HX-15E:D TR Datasheet - Page 42
MT41J128M8HX-15E:D TR
Manufacturer Part Number
MT41J128M8HX-15E:D TR
Description
IC DDR3 SDRAM 1GBIT 78FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT41J64M16LA-187EB_TR.pdf
(181 pages)
Specifications of MT41J128M8HX-15E:D TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (128M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1376-2
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Figure 17: Input Signal
AC Overshoot/Undershoot Specification
Table 23:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 18 on page 43)
Maximum peak amplitude allowed for undershoot area
(see Figure 19 on page 43)
Maximum overshoot area above V
Maximum undershoot area below V
0.925V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
0.575V
Control and Address Pins
Minimum V
Notes:
V
V
V
V
IH
IH
IL
IL
(
(
(
(
DC
AC
AC
DC
)
)
)
)
IL
and V
1. Numbers in diagrams reflect nominal values.
IH
levels
DD
SS
(see Figure 18 on page 43)
(see Figure 19 on page 43)
0.925V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
0.575V
–0.40V
1.90V
1.50V
0.0V
42
V
IL
DDR3-800
0.67 Vns
0.67 Vns
and V
0.4V
0.4V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
IH
levels with ringback
1Gb: x4, x8, x16 DDR3 SDRAM
DDR3-1066
0.5 Vns
0.5 Vns
0.4V
0.4V
DDR3-1333
©2006 Micron Technology, Inc. All rights reserved.
0.4 Vns
0.4 Vns
0.4V
0.4V
V
V
pulse width
V
V
V
V
V
V
pulse width
V
V
V
V
SS
DD
DD
IH
IH
IL
IL
SS
REF
REF
REF
REF
(
(
(
(
DC
AC
Q + 0.4V narrow
Q
- 0.4V narrow
AC
DC
+ AC noise
+ DC error
- DC error
- AC noise
)
)
)
)
DDR3-1600
0.33 Vns
0.33 Vns
0.4V
0.4V
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