MT41J64M16LA-15E:B TR Micron Technology Inc, MT41J64M16LA-15E:B TR Datasheet - Page 58
![IC DDR3 SDRAM 1GBIT 96FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J64M16LA-15E:B TR
Manufacturer Part Number
MT41J64M16LA-15E:B TR
Description
IC DDR3 SDRAM 1GBIT 96FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J64M16LA-15E:B TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 24: ODT Timing Reference Load
Table 34: ODT Timing Definitions
Table 35: Reference Settings for ODT Timing Measurements
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Symbol
t
Measured Parameter
t
AONPD
AOFPD
t
t
t
AON
AOF
ADC
t
t
AONPD
AOFPD
t
t
t
AON
AOF
ADC
point of ODTLcnw, ODTLcwn4, or ODTLcwn8
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# with ODT first
Rising edge of CK - CK# with ODT first
Begin Point Definition
Note:
being registered HIGH
being registered LOW
point of ODTL off
point of ODTL on
CK, CK#
1. Assume an RZQ of 240Ω (±1%) and that proper ZQ calibration has been performed at a
R
stable temperature and voltage (V
TT,nom
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
DUT
TDQS, TDQS#
Setting
DQS, DQS#
ZQ
DQ, DM
V
REF
V
DDQ
RZQ = 240Ω
R
Timing reference point
/2
TT
R
58
= 25Ω
Extrapolated points at V
TT(WR)
RZQ/2 (120Ω)
Extrapolated point at V
Extrapolated point at V
Extrapolated point at V
Extrapolated point at V
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
End Point Definition
Setting
DDQ
V
V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TT
SSQ
= V
= V
V
RTT,nom
DD
SSQ
, V
1Gb: x4, x8, x16 DDR3 SDRAM
SSQ
= V
RTT(WR)
RTT,nom
RTT,nom
100mV
100mV
100mV
100mV
200mV
SS
50mV
50mV
50mV
50mV
V
SSQ
SSQ
).
SW1
and
ODT Characteristics
© 2006 Micron Technology, Inc. All rights reserved.
Figure 25 (page 59)
Figure 25 (page 59)
Figure 26 (page 59)
Figure 26 (page 59)
Figure 27 (page 60)
Figure
100mV
200mV
100mV
200mV
100mV
200mV
100mV
200mV
300mV
V
SW2
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