MT41J64M16LA-15E:B TR Micron Technology Inc, MT41J64M16LA-15E:B TR Datasheet - Page 43
![IC DDR3 SDRAM 1GBIT 96FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J64M16LA-15E:B TR
Manufacturer Part Number
MT41J64M16LA-15E:B TR
Description
IC DDR3 SDRAM 1GBIT 96FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J64M16LA-15E:B TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Table 24:
Figure 18: Overshoot
Figure 19: Undershoot
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 18 on page 43)
Maximum peak amplitude allowed for undershoot area
(see Figure 19 on page 43)
Maximum overshoot area above V
(see Figure 18 on page 43)
Maximum undershoot area below V
(see Figure 19 on page 43)
Clock, Data, Strobe, and Mask Pins
Volts (V)
Volts (V)
V
DD
V
DD
/V
SS
SS
/V
/V
DD
/V
DD
SS
Q
SS
Q
Q
Q
Maximum amplitude
Maximum amplitude
43
DDR3-800
0.25 Vns
0.25 Vns
0.4V
0.4V
Time (ns)
Time (ns)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
DDR3-1066
1Gb: x4, x8, x16 DDR3 SDRAM
0.19 Vns
0.19 Vns
0.4V
0.4V
Undershoot area
Overshoot area
DDR3-1333
©2006 Micron Technology, Inc. All rights reserved.
0.15 Vns
0.15 Vns
0.4V
0.4V
DDR3-1600
0.13 Vns
0.13 Vns
0.4V
0.4V
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