MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 37

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
VddQ = +1.8V ±0.1V, Vdd = +1.8V ±0.1V
DQS rising edge to
CK rising edge
DQS input-high
pulse width
DQS input-low
pulse width
DQS falling to CK
rising: setup time
DQS falling from
CK
rising: hold time
Write preamble
setup time
DQS write
preamble
DQS write
postamble
WRITE command
to first DQS transi-
tion
Parameter
AC Characteristics
Symbol
t
t
WPRES
t
t
t
t
DQSH
WPRE
t
WPST
DQSS
DQSL
t
DSH
DSS
–
Min
-187E
Max
Min
-25E
Max
Min
-25
Max
MAX = WL +
MAX = +0.25 ×
MIN = –0.25 ×
MIN = WL -
MIN = 0.35 ×
MIN = 0.35 ×
MIN = 0.35 ×
MAX = 0.6 ×
MIN = 0.2 ×
MIN = 0.2 ×
MIN = 0.4 ×
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
Min
MIN = 0
-3E
Max
t
DQSS
t
DQSS
t
t
t
t
t
t
CK
CK
t
CK
CK
t
CK
CK
CK
CK
t
CK
Min
-3
Max
Min
-37E
Max
Min
-5E
Max
Units Notes
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
ps
CK
CK
CK
23, 24
18, 25
18
18
18
18
18
18