CY7C1019B-15VC Cypress Semiconductor Corp, CY7C1019B-15VC Datasheet - Page 4
![IC SRAM 1MBIT 15NS 32SOJ](/photos/7/23/72395/428-32-soj_sml.jpg)
CY7C1019B-15VC
Manufacturer Part Number
CY7C1019B-15VC
Description
IC SRAM 1MBIT 15NS 32SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1019B-12VC.pdf
(9 pages)
Specifications of CY7C1019B-15VC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1004
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1019B-15VC
Manufacturer:
CYPRESS
Quantity:
982
Part Number:
CY7C1019B-15VC
Manufacturer:
CYP
Quantity:
20 000
Data Retention Characteristics
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2 (OE Controlled)
Notes:
Document #: 38-05026 Rev. *A
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
9.
V
I
t
t
Parameter
CCDR
CDR
R
DATA OUT
CURRENT
ADDRESS
DR
DATA OUT
ADDRESS
SUPPLY
Device is continuously selected. OE, CE = V
[3]
CE
V
V
OE
CE
CC
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
[9, 10]
for Data Retention
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Description
t
LZCE
[10, 11]
t
t
ACE
LZOE
IL
.
Over the Operating Range (L Version Only)
50%
t
OHA
t
t
DOE
CDR
3.0V
t
AA
t
RC
No input may exceed V
V
CE > V
V
DATA RETENTION MODE
CC
IN
> V
= V
t
RC
V
CC
CC
DR
DR
– 0.3V,
– 0.3V or V
> 2V
= 2.0V,
Conditions
DATA VALID
IN
CC
< 0.3V
+ 0.5V
t
HZOE
DATA VALID
3.0V
t
R
t
HZCE
Min.
t
200
2.0
PD
0
CY7C10191B
50%
CY7C1019B/
Max.
IMPEDANCE
300
HIGH
Page 4 of 9
Unit
ns
ICC
ISB
V
A
s