CY7C1381B-100AC Cypress Semiconductor Corp, CY7C1381B-100AC Datasheet - Page 24

• Manufacturer Part Number: CY7C1381B-100AC
• Description: IC SRAM 18MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1381B-100AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1137

Switching Waveforms
Document #: 38-05196 Rev. **
Read/Write Cycle Timing
Read/Write Timing
ADV
ADSC
ADSP
Data
In/Out
CE
CE
ADD
OE
CLK
BWE
1
Device originally
deselected
tCLZ
t
CDV
A
CE is the combination of CE
WE is the combination of BWE, BWx, and GW to define a Write cycle (see Write cycle description table).
Qx stands for Data-out X.
the device. RAx stands for Read Address X, WAx stands for Write Address X, Dx stands for Data-in X,
t
t
AS
ADS
t
t
CES
CES
Q(A)
[16, 17, 18]
B
(continued)
t
ADS
t
AH
Q(B)
t
ADVS
(B+1)
2
Q
and CE
= Don’t Care
ADSP ignored
with CE
(B+2)
t
CH
Q
3
. All chip selects need to be active in order to select
t
ADVH
1
(B+3)
HIGH
Q
t
t
CYC
ADH
Q(B)
= Undefined
t
WES
t
EOHZ
D(C)
C
t
CL
t
t
CEH
ADH
t
(C+1)
CEH
D
tDOH
t
WEH
(C+2)
D
(C+3)
tCHZ
D
D
CY7C1381B
CY7C1383B
Page 24 of 31
Q(D)