CY7C1041CV33-15VC Cypress Semiconductor Corp, CY7C1041CV33-15VC Datasheet - Page 6
![IC SRAM 4MBIT 15NS 44SOJ](/photos/7/23/72391/428-44-soj_sml.jpg)
CY7C1041CV33-15VC
Manufacturer Part Number
CY7C1041CV33-15VC
Description
IC SRAM 4MBIT 15NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1041CV33-15VC.pdf
(12 pages)
Specifications of CY7C1041CV33-15VC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
15ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1483
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Document #: 38-05134 Rev. *H
AC Switching Characteristics
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2 (OE Controlled)
Notes:
10. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t
12. WE is HIGH for Read cycle.
13. Address valid prior to or coincident with CE transition LOW.
11. Device is continuously selected. OE, CE, BHE and/or BHE = V
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
Parameter
DATA OUT
CURRENT
DATA OUT
ADDRESS
BHE, BLE
SUPPLY
ADDRESS
V
CC
OE
CE
[9, 10]
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low-Z
WE LOW to High-Z
Byte Enable to End of Write
[11, 12]
PREVIOUS DATA VALID
Description
HIGH IMPEDANCE
t
t
LZCE
PU
[7]
[7, 8]
[12, 13]
t
ACE
t
t
LZBE
[5]
t
DBE
LZOE
t
DOE
Over the Operating Range (continued)
t
50%
OHA
Min.
10
t
7
7
0
0
7
5
0
3
7
AA
IL
.
-10
t
RC
Max.
5
t
RC
Min.
12
8
8
0
0
8
6
0
3
8
-12
HZWE
Max.
DATA VALID
6
and t
SD
Min.
15
10
10
10
10
.
0
0
7
0
3
-15
Max.
t
HZOE
DATA VALID
7
t
t
CY7C1041CV33
HZCE
HZBE
Min.
t
20
10
10
10
10
PD
0
0
8
0
3
50%
-20
IMPEDANCE
Max.
HIGH
8
Page 6 of 12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
I
I
ICC
ISB
CC
SB