LH28F160S5T-L70A Sharp Microelectronics, LH28F160S5T-L70A Datasheet - Page 12
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LH28F160S5T-L70A
Manufacturer Part Number
LH28F160S5T-L70A
Description
IC FLASH 16MBIT 70NS 56TSOP
Manufacturer
Sharp Microelectronics
Datasheet
1.LH28F160S5T-L70A.pdf
(63 pages)
Specifications of LH28F160S5T-L70A
Rohs Status
RoHS non-compliant
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.75 V ~ 5.25 V
Operating Temperature
0°C ~ 70°C
Package / Case
56-TSOP
Other names
425-1840
LHF16KA9
LHF16KA9
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LH28F160S5T-L70A
Manufacturer:
SHARP
Quantity:
900
Company:
Part Number:
LH28F160S5T-L70A
Manufacturer:
SHARP
Quantity:
900
Part Number:
LH28F160S5T-L70A
Manufacturer:
SHARP
Quantity:
20 000
sharp
NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. STS is V
4. RP# at GND±0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. See Section 4.5 for query data.
7. Command writes involving block erase, full chip erase, (multi) word/byte write or block lock-bit configuration are
8. Refer to Table 4 for valid D
9. Don’t use the timing both OE# and WE# are V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
V
(multi) word/byte write or block lock-bit configuration algorithms. It is floated during when the WSM is not busy,
in block erase suspend mode with (multi) word/byte write inactive, (multi) word/byte write suspend mode, or
deep power-down mode.
reliably executed when V
PPLK
Mode
Mode
and V
OL
IL
(if configured to RY/BY# mode) when the WSM is executing internal block erase, full chip erase,
PPH1
or V
IH
voltages.
for control pins and addresses, and V
1,2,3,9
3,7,8,9
1,2,3,9
3,7,8,9
Notes
Notes
3
3
4
9
9
3
3
4
9
9
PP
IN
=V
during a write operation.
PPH1
RP#
RP#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
Table 3.1. Bus Operations(BYTE#=V
Table 3. Bus Operations(BYTE#=V
and V
PP
≤V
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
X
X
CC
IH
IH
IH
IH
PPLK
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
0
0
#
#
=V
IL
, memory contents can be read, but not altered.
CC1/2
.
LHF16KA9
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
1
1
.
#
#
PPLK
OE#
OE#
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
or V
WE#
WE#
PPH1
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IH
for V
IL
)
See Table
See Table
Address
Address
)
Figure 4
Figure 4
7~11
7~11
PP
See
See
X
X
X
X
X
X
X
X
X
X
. See DC Characteristics for
V
V
X
X
X
X
X
X
X
X
X
X
X
X
X
X
PP
PP
DQ
High Z
High Z
High Z
Note 5
Note 6
High Z
High Z
High Z
Note 5
Note 6
DQ
D
D
D
D
OUT
OUT
0-15
IN
IN
0-7
Rev. 2.0
High Z
High Z
High Z
High Z
High Z
High Z
STS
STS
X
X
X
X
X
X
X
X
9