M28W640ECB90N6 STMicroelectronics, M28W640ECB90N6 Datasheet - Page 41
![IC FLASH 64MBIT 90NS 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
M28W640ECB90N6
Manufacturer Part Number
M28W640ECB90N6
Description
IC FLASH 64MBIT 90NS 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.M28W640ECB90N6.pdf
(55 pages)
Specifications of M28W640ECB90N6
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (4M x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1698
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Table 29. Device Geometry Definition
Offset Word
Mode
2Ch
2Ah
2Bh
27h
28h
29h
2Dh
2Dh
2Eh
2Fh
2Eh
2Fh
30h
31h
32h
33h
34h
30h
31h
32h
33h
34h
0017h
0001h
0000h
0003h
0000h
0002h
007Eh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
007Eh
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
Region 1 Information
Number of identical-size erase block = 007Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Region 2 Information
Number of identical-size erase block = 0007h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 1 Information
Number of identical-size erase block = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of identical-size erase block = 007Eh=1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
n
in number of bytes
Description
M28W640ECT, M28W640ECB
n
64 KByte
64 KByte
8 MByte
8 KByte
8 KByte
Async.
Value
127
127
x16
8
2
8
8
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