CY7C1370C-133AC Cypress Semiconductor Corp, CY7C1370C-133AC Datasheet - Page 18

• Manufacturer Part Number: CY7C1370C-133AC
• Description: IC SRAM 18MBIT 133MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1370C-133AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1507

Document #: 38-05233 Rev. *D
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC to Outputs in Tri-State ................... –0.5V to V
DC Input Voltage....................................–0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
Shaded areas contain advance information.
Notes:
14. Overshoot: V
15. T
X
OZ
DD
SB1
SB2
SB3
SB4
Parameter
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0V to V
IH
(AC) < V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Input Current of MODE
Output Leakage Current GND ≤ V
V
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
DD
Operating Supply
DD
Description
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
Over the Operating Range
[14]
DD
V
V
V
V
V
V
V
V
V
V
GND ≤ V
V
f = f
Max. V
V
1/t
Max. V
V
f = 0
Max. V
V
f = f
Max. V
V
DDQ
DDQ
DD
DD
DD
DD
DDQ
DDQ
DDQ
DDQ
DD
IN
IN
IN
IN
(min.) within 200ms. During this time V
CYC
MAX
MAX
≥ V
≤ 0.3V or V
≤ 0.3V or V
≥ V
= Max., I
= Min., I
= Min., I
= Min., I
= Min., I
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
DD
DD
DD
DD
CYC
IH
IH
= 1/t
= 1/t
DDQ
I
I
, Device Deselected,
, Device Deselected,
, Device Deselected,
, Device Deselected,
/2), undershoot: V
or V
or V
≤ V
≤ V
DD
OH
OH
OL
OL
CYC
CYC
OUT
+ 0.5V
+ 0.5V
DDQ
DDQ,
IN
IN
IN
IN
= 8.0 mA, V
= 1.0 mA, V
= −1.0 mA, V
= −4.0 mA, V
≤ V
≤ V
> V
> V
= 0 mA,
Output Disabled
IL
IL
[14, 15]
Test Conditions
DDQ
DDQ
, f = f
, f = 0
IL
(AC)> -2V (Pulse width less than t
− 0.3V,
− 0.3V,
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Commercial
Industrial
MAX
DDQ
DDQ
DDQ
Range
DDQ
=
= 3.3V
= 2.5V
IH
= 2.5V
< V
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
= 3.3V
DD
and V
–40°C to +85°C
Temperature
0°C to +70°C 3.3V–5%/+10% 2.5V –5% to
Ambient
DDQ
< V
DD
.
CYC
/2).
3.135
3.135
2.375
Min.
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
V
DD
CY7C1370C
CY7C1372C
V
V
DD
DD
2.625
Max.
V
350
325
300
275
120
110
100
105
100
3.6
0.4
0.4
0.8
0.7
30
90
70
95
85
80
Page 18 of 27
+ 0.3V
+ 0.3V
5
DD
5
V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V