CY7C199C-25PC Cypress Semiconductor Corp, CY7C199C-25PC Datasheet - Page 7

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CY7C199C-25PC

Manufacturer Part Number
CY7C199C-25PC
Description
IC SRAM 256KBIT 25NS 28DIP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C199C-25PC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1575-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C199C-25PC
Quantity:
200
Document #: 38-05408 Rev. *C
Timing Waveforms
Read Cycle No. 2
Write Cycle No. 1 (WE Controlled)
Notes:
12. Address valid prior to or coincident with CE transition LOW.
13. This cycle is WE controlled, OE is HIGH during write.
14. Data In/Out is high impedance if OE = V
15. During this period the I/Os are in output state and input signals should not be applied.
11. This cycle is OE Controlled and WE is HIGH read cycle.
Data In/Out
Data Out
Current
Address
Address
V
WE
OE
CE
CE
OE
CC
[11, 12]
Undefined
see footnotes
I
I
CC
SB
(continued)
High Z
IH
[13, 14, 15]
t
.
t
HZOE
SA
t
LZCE
t
PU
t
AW
t
ACE
t
t
SCE
LZOE
50%
t
DOE
Data-In Valid
t
WC
t
RC
t
t
SD
PWE
Data Valid
t
HD
t
HZOE
t
HA
CY7C199C
50%
t
HZCE
t
PD
Page 7 of 13
High Z

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