W27C512-45Z Winbond Electronics, W27C512-45Z Datasheet - Page 6

IC EEPROM 512KBIT 45NS 28DIP

W27C512-45Z

Manufacturer Part Number
W27C512-45Z
Description
IC EEPROM 512KBIT 45NS 28DIP
Manufacturer
Winbond Electronics
Datasheet

Specifications of W27C512-45Z

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
512K (64K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
4.75 V ~ 5.25 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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W27C512
Standby Mode
The standby mode significantly reduces V
current. This mode is entered when CE high. In standby
CC
mode, all outputs are in a high impedance state, independent of OE /V
.
PP
Two-line Output Control
Since EPROMs are often used in large memory arrays, the W27C512 provides two control inputs for
multiple memory connections. Two-line control provides for lowest possible memory power dissipation
and ensures that data bus contention will not occur.
System Considerations
An EPROM's power switching characteristics require careful device decoupling. System designers are
interested in three supply current issues: standby current levels (I
), active current levels (I
), and
SB
CC
transient current peaks produced by the falling and rising edges of CE . Transient current magnitudes
depend on the device output's capacitive and inductive loading. Two-line control and proper
decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 μ
F ceramic capacitor connected between its V
and GND. This high frequency, low inherent-
CC
inductance capacitor should be placed as close as possible to the device. Additionally, for every eight
devices, a 4.7 μF electrolytic capacitor should be placed at the array's power supply connection
between V
and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace
CC
inductances.
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