CY6264-55SNXCT Cypress Semiconductor Corp, CY6264-55SNXCT Datasheet - Page 4

• Manufacturer Part Number: CY6264-55SNXCT
• Description: IC SRAM 64KBIT 55NS 28SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY6264-55SNXCT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 64K (8K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-02367 Rev. **
AC Test Loads and Waveforms
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2
Notes:
OUTPUT
Equivalent to:
10. WE is HIGH for read cycle.
11. Data I/O is High Z if OE = V
8. Device is continuously selected. OE, CE = V
9. Address valid prior to or coincident with CE transition LOW.
DATA OUT
DATA OUT
CURRENT
ADDRESS
INCLUDING
SUPPLY
5V
JIG AND
SCOPE
CE
CE
V
OE
OE
CC
30 pF
1
2
OUTPUT
R1 481Ω
(a)
THÉVENIN EQUIVALENT
[8, 9]
[10, 11]
PREVIOUS DATA VALID
IH
HIGH IMPEDANCE
, CE
R2
255Ω
t
PU
1
= V
167Ω
t
LZCE
IH
OUTPUT
, or WE = V
t
t
LZOE
INCLUDING
ACE
IL
. CE
5V
JIG AND
t
SCOPE
50%
OHA
t
2
DOE
1.73V
= V
IL
5 pF
.
IH.
(b)
R1 481Ω
t
AA
t
RC
R2
255Ω
t
RC
DATA VALID
GND
3.0V
< 5 ns
10%
ALL INPUT PULSES
t
DATA VALID
HZOE
90%
t
HZCE
t
PD
50%
IMPEDANCE
CY6264
90%
Page 4 of 10
HIGH
10%
< 5 ns
ICC
ISB
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