CY7C1021BN-15ZXC Cypress Semiconductor Corp, CY7C1021BN-15ZXC Datasheet - Page 5

• Manufacturer Part Number: CY7C1021BN-15ZXC
• Description: IC SRAM 1MBIT 15NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021BN-15ZXC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-06494 Rev. *A
Switching Characteristics
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2 (OE Controlled)
Notes:
10. WE is HIGH for read cycle.
Write Cycle
t
t
t
t
t
t
t
t
t
t
8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a
9. Device is continuously selected. OE, CE, BHE and/or BHE = V
WC
SCE
AW
HA
SA
SD
HD
LZWE
HZWE
BW
DATA
CURRENT
DATA OUT
ADDRESS
Parameter
write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that
terminates the write.
BHE, BLE
SUPPLY
ADDRESS
V
CC
OUT
OE
CE
[8]
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
Byte Enable to End of Write
[9, 10]
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
t
LZCE
PU
Description
[5]
[10, 11]
Over the Operating Range (continued)
[6]
[6, 7]
t
ACE
t
t
LZBE
t
DBE
LZOE
t
DOE
50%
t
OHA
t
AA
IL
.
t
RC
Min.
7C10211B-10
10
7
8
7
0
0
5
0
3
t
RC
Max.
5
DATA VALID
Min.
7C1021B-12
12
9
8
0
0
6
0
3
8
Max.
6
t
HZOE
DATA VALID
t
t
HZCE
HZBE
Min.
CY7C10211BN
7C1021B-15
15
10
10
9
0
0
8
0
3
t
CY7C1021BN
PD
50%
IMPEDANCE
Max.
HIGH
7
Page 5 of 10
Unit
I
I
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ICC
ISB
CC
SB
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