CY7C1426AV18-250BZXC Cypress Semiconductor Corp, CY7C1426AV18-250BZXC Datasheet - Page 20

• Manufacturer Part Number: CY7C1426AV18-250BZXC
• Description: IC SRAM 36MBIT 250MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1426AV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (4M x 9)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 38-05614 Rev. *C
Maximum Ratings
(
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied .. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z .........–0.5V to V
DC Input Voltage
Current into Outputs (LOW) .........................................20 mA
Electrical Characteristics
DC Electrical Characteristics
AC Input Requirements
Above which the useful life may be impaired
V
V
V
V
V
V
V
V
I
I
V
I
I
V
V
Notes:
17. All Voltage referenced to Ground.
18. Output are impedance controlled. I
19. Output are impedance controlled. I
20. Overshoot: V
21. Power-up: Assumes a linear ramp from 0V to V
22. V
Parameter
Parameter
X
OZ
DD
SB1
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
REF
(Min.) = 0.68V or 0.46V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic
Power-down
Current
Input HIGH Voltage
Input LOW Voltage
IH
DD
(AC) < V
[20]
Operating Supply
DD
DDQ
...............................–0.5V to V
Description
Description
DDQ
Relative to GND........ –0.5V to +2.9V
Relative to GND ...... –0.5V to +V
+ 0.85V (Pulse width less than t
Over the Operating Range
DDQ
, whichever is larger, V
OH
OL
Over the Operating Range
[20]
= (V
[20]
=
Over the Operating Range
−
(V
DDQ
[22]
DDQ
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
DD
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
Note 18
Note 19
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
f = f
Max. V
Deselected, V
V
f = f
Inputs Static
OH
OL
(min.) within 200 ms. During this time V
DD
IN
.)
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
MAX
≤ V
= Max., I
REF
DD
IL
DDQ
= 1/t
= 1/t
CYC
(Max.) = 0.95V or 0.54V
DD
I
I
Test Conditions
, Both Ports
≤ V
≤ V
Test Conditions
/2), Undershoot: V
+ 0.3V
+ 0.3V
CYC
CYC
OUT
DDQ
DDQ,
IN
DD
≥ V
,
= 0mA,
Output Disabled
[17]
IH
or
Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V
Latch-up Current..................................................... >200 mA
Operating Range
Com’l
Ind’l
Range
IL
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
(AC) >
DDQ
, whichever is smaller.
IH
−
< V
1.5V (Pulse width less than t
Temperature (T
DD
–40°C to +85°C
V
V
0°C to +70°C
and V
DDQ
DDQ
V
V
V
Ambient
DDQ
REF
REF
Min.
–0.3
0.68
V
DDQ
1.7
1.4
/2 – 0.12
/2 – 0.12
Min.
−5
−5
SS
+ 0.1
–
– 0.2
+ 0.2
< V
DD
A
)
Typ.
0.75
1.8
1.5
CYC
Typ.
1.8 ± 0.1V
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
CY7C1411AV18
–
–
/2).
V
DD
V
V
[21]
DDQ
DDQ
V
V
DDQ
REF
V
V
Max.
0.95
V
600
700
800
875
925
270
300
330
355
370
/2 + 0.12
/2 + 0.12
1.9
0.2
REF
DDQ
DD
5
5
Max.
– 0.1
+ 0.3
Page 20 of 28
1.4V to V
–
– 0.2
V
DDQ
[21]
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Unit
µA
µA
V
V
V
V
V
V
V
V
V
DD
V
V
[+] Feedback