CY7C199CN-12VXI Cypress Semiconductor Corp, CY7C199CN-12VXI Datasheet - Page 5

• Manufacturer Part Number: CY7C199CN-12VXI
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199CN-12VXI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
Thermal Resistance
AC Test Loads
AC Test Conditions
Note
Document #: 001-06435 Rev. *B
C1
C2
R1
R2
R3
R4
R
V
3. Tested initially and after any design or process change that may affect these parameters.
C
C
Parameter
Parameter
TH
TH
IN
OUT
Θ
Θ
JC
JA
Parameter
O u tp u t
Thermal Resistance
(junction to ambient)
Thermal Resistance
(junction to case)
Input Capacitance
Output Capacitance
T h e v e n in E q u iv a le n t
[3]
Description
Description
V
C C
[3]
R
O u tp u t L o a d s
th
C 1
(A )*
Capacitor 1
Capacitor 2
Resistor 1
Resistor 2
Resistor 3
Resistor 4
Resistor Thevenin
Voltage Thevenin
V
R 1
T
Still air, soldered on a 3 × 4.5
square inch, two–layer printed
circuit board
T
A
= 25°C, f = 1 MHz, V
R 2
* in c lu d in g s c o p e a n d jig c a p a c ita n c e
V
V
Conditions
C C
S S
Description
1 0 %
Conditions
R is e T im e
1 V /n s
9 0 %
CC
= 5.0V
TSOP I
21.94
A ll In p u t P u ls e s
88.6
O u tp u t
V
C C
fo r t
O u tp u t L o a d s
H Z O E
C 2
41.42
SOJ
, t
79
(B )*
H Z C E
Nom
1.73
480
255
480
255
167
& t
30
5
R 3
H Z W E
Max
F a ll T im e
1 V /n s
8
8
9 0 %
R 4
69.33
31.62
DIP
CY7C199CN
1 0 %
Page 5 of 14
Unit
pF
°C/W
Unit
Unit
pF
Ω
V