CY14B256L-SZ45XC Cypress Semiconductor Corp, CY14B256L-SZ45XC Datasheet - Page 12

IC NVSRAM 256KBIT 45NS 32SOIC

CY14B256L-SZ45XC

Manufacturer Part Number
CY14B256L-SZ45XC
Description
IC NVSRAM 256KBIT 45NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheets

Specifications of CY14B256L-SZ45XC

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOIC (7.5mm Width)
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
45ns
Operating Supply Voltage (typ)
3.3V
Package Type
SOIC
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
0C to 70C
Pin Count
32
Mounting
Surface Mount
Supply Current
50mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256L-SZ45XC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY14B256L-SZ45XCT
Manufacturer:
CYPRESS
Quantity:
6 415
AutoStore or Power Up RECALL
Switching Waveforms
Notes
Document Number: 001-06422 Rev. *I
t
t
V
t
12. t
13. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place.
14. Industrial grade devices requires 15 ms max.
HRECALL
STORE
VCCRISE
Note Read and Write cycles are ignored during STORE, RECALL, and while Vcc is below V
SWITCH
Read & Write Inhibited
POWER-UP RECALL
HRECALL
Parameter
[13, 14]
AutoStore
[12]
V
starts from the time V
SWITCH
V
CC
t
t
RESTORE
HLHZ
t
VCCRISE
CC
Alt
rises above V
t
HRECALL
Power up RECALL Duration
STORE Cycle Duration
Low Voltage Trigger Level
V
SWITCH
CC
Figure 9. AutoStore/Power Up RECALL
Rise Time
.
Description
t
STORE
SWITCH
t
HRECALL
STORE occurs only
if a SRAM write
has happened
Min
150
CY14B256L
t
STORE
Max
12.5
2.65
20
No STORE occurs
without atleast one
SRAM write
CY14B256L
Page 12 of 19
Unit
ms
ms
μs
V
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