M27V160-100XF1 STMicroelectronics, M27V160-100XF1 Datasheet - Page 10

• Manufacturer Part Number: M27V160-100XF1
• Description: IC EPROM 16MBIT 100NS 42CDIP
• Manufacturer: STMicroelectronics

Specifications of M27V160-100XF1

• Format - Memory: EPROMs
• Memory Type: UV EPROM
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 3.14 V ~ 3.47 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 42-CDIP (0.600", 15.24mm) Window
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device description
2.6
2.7
2.8
10/26
Program Inhibit
Program Verify
Presto III programming algorithm
The Presto III Programming Algorithm allows the whole array to be programed with a
guaranteed margin in a typical time of 52.5 seconds. Programming with Presto III consists of
applying a sequence of 50µs program pulses to each word until a correct Verify occurs (see
Figure
During programing and verify operation a Margin Mode circuit is automatically activated to
guarantee that each cell is programed with enough margin. No overprogram pulse is applied
since the Verify in Margin Mode at V
margin to each programmed cell.
Figure 5.
Programming of multiple M27V160s in parallel with different data is also easily
accomplished. Except for E, all like inputs including G of the parallel M27V160 may be
common. A TTL low level pulse applied to a M27V160's E input and V
program that M27V160. A high level E input inhibits the other M27V160s from being
programmed.
A verify (read) should be performed on the programmed bits to determine that they were
correctly programmed. The verify is accomplished with E at V
and V
CC
5.).
at 6.25V.
Programming Flowchart
YES
NO
= 25
FAIL
++n
V CC = 6.25V, V PP = 12.5V
CC
CHECK ALL WORDS
NO
BYTEV PP =V IH
1st: V CC = 5V
E = 50 s Pulse
2nd: V CC = 3V
much higher than 3.6V provides the necessary
VERIFY
n = 0
Addr
Last
YES
YES
NO
++ Addr
AI00901B
IH
and G at V
PP
at 12.5V, will
IL
, V
PP
M27V160
at 12.5V