M29F200BB45N1 STMicroelectronics, M29F200BB45N1 Datasheet - Page 29

• Manufacturer Part Number: M29F200BB45N1
• Description: IC FLASH 2MBIT 45NS 48TSOP
• Manufacturer: STMicroelectronics

Specifications of M29F200BB45N1

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 2M (256K x 8 or 128K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29F200BT, M29F200BB
Figure 7.
Table 11.
1. T
2. Sampled only, not 100% tested.
Symbol
V
I
CC4
I
I
I
LKO
V
V
V
V
I
CC1
CC2
CC3
V
I
I
LO
OH
A
ID
LI
OL
IH
ID
IL
(2)
= 25°C, V
(2)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby) TTL
Supply Current (Standby)
CMOS
Supply Current
(Program/Erase)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
Identification Voltage
Identification Current
Program/Erase Lockout Supply
Voltage
AC testing load circuit
DC characteristics (T
CC
= 5V.
Parameter
C L includes JIG capacitance
DEVICE
UNDER
TEST
A
= 0 to 70°C, –40 to 85°C or –40 to 125°C)
0V ≤ V
E = V
RP = V
Controller active
1.3V
Test Condition
0V ≤ V
E = V
Program/Erase
I
I
OH
OH
I
OL
f = 6MHz
A9 = V
E = V
= –2.5mA
= –100
IL
= 5.8mA
1N914
3.3k
CC
OUT
, G = V
CC
IN
C L = 30pF or 100pF
±0.2V,
≤ V
IH
±0.2V
≤ V
ID
µ
CC
A
IH
CC
,
OUT
V
CC
AI03027
–0.5
11.5
Min
2.4
3.2
2
–0.4
DC and ac parameters
Typ
30
6
(1)
V
CC
Max
0.45
12.5
100
100
0.8
4.2
±1
±1
20
20
1
+0.5
Unit
29/39
mA
mA
mA
µ
µ
µ
µ
V
V
V
V
V
V
V
A
A
A
A