M29F200BB50N3 STMicroelectronics, M29F200BB50N3 Datasheet - Page 21

• Manufacturer Part Number: M29F200BB50N3
• Description: IC FLASH 2MBIT 50NS 48TSOP
• Manufacturer: STMicroelectronics

Specifications of M29F200BB50N3

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 2M (256K x 8 or 128K x 16)
• Speed: 50ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29F200BT, M29F200BB
Table 6.
1. T
Chip Erase (All bits in the memory set to ‘0’)
Chip Erase
Block Erase (64 Kbytes)
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
A
= 25°C, V
Program, Erase times and Program, Erase endurance cycles
(T
CC
A
= 5V.
Parameter
= 0 to 70°C, –40 to 85°C or –40 to 125°C)
100,000
Min
Typ
0.8
2.5
0.6
2.3
1.2
8
(1)
100k W/E Cycles
Typical after
0.8
2.5
0.6
2.3
1.2
8
(1)
Command interface
Max
150
4.5
10
4
9
cycles
Unit
µs
s
s
s
s
s
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