M93C46-MN6 STMicroelectronics, M93C46-MN6 Datasheet - Page 15

IC EEPROM 1KBIT 2MHZ 8SOIC

M93C46-MN6

Manufacturer Part Number
M93C46-MN6
Description
IC EEPROM 1KBIT 2MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M93C46-MN6

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
1K (128 x 8 or 64 x 16)
Speed
2MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M93C46-MN6/FSMC
Manufacturer:
ST
0
Part Number:
M93C46-MN6P
Manufacturer:
ST
0
Part Number:
M93C46-MN6T
Manufacturer:
ST
Quantity:
4 409
Part Number:
M93C46-MN6T
Manufacturer:
ST
Quantity:
1 065
Part Number:
M93C46-MN6T
Manufacturer:
ST
0
Part Number:
M93C46-MN6T
Manufacturer:
ST
Quantity:
20 000
Part Number:
M93C46-MN6T(93C46 6)
Manufacturer:
ST
0
Part Number:
M93C46-MN6T/FSF
Manufacturer:
ST
Quantity:
20 000
Part Number:
M93C46-MN6TP
Manufacturer:
ST
Quantity:
5 656
Part Number:
M93C46-MN6TP/S
Manufacturer:
ST
Quantity:
20 000
M93C86, M93C76, M93C66, M93C56, M93C46
5.3
Figure 4.
1. For the meanings of An, Xn, Qn and Dn, see
Erase Byte or Word
The Erase Byte or Word (ERASE) instruction sets the bits of the addressed memory byte (or
word) to 1. Once the address has been correctly decoded, the falling edge of the Chip
Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be
detected by monitoring the READY/BUSY line, as described in the
section.
Read
Write
Write
Enable
READ, WRITE, WEN, WDS sequences
S
Q
S
S
Q
D
D
D
1 0
1
1 1 0 An
CODE
CODE
CODE
OP
0
OP
OP
1
0
1
An
1
ADDR
ADDR
Doc ID 4997 Rev 11
Xn X0
A0
A0
Qn
Dn
Table
5.,
DATA OUT
DATA IN
Table 6.
Write
Disable
and
Table
S
D
D0
Q0
7..
BUSY
READY/BUSY status
1
CODE
STATUS
CHECK
0
OP
0
0
0
READY
Xn X0
Instructions
AI00878d
15/36

Related parts for M93C46-MN6