M93S66-WMN6P STMicroelectronics, M93S66-WMN6P Datasheet - Page 19

IC EEPROM 4KBIT 2MHZ 8SOIC

M93S66-WMN6P

Manufacturer Part Number
M93S66-WMN6P
Description
IC EEPROM 4KBIT 2MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheets

Specifications of M93S66-WMN6P

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
4K (256 x 16)
Speed
2MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Organization
256 K x 16
Interface Type
Microwire
Maximum Clock Frequency
2 MHz
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.5 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 5.5 V
Capacitance, Input
5 pF
Capacitance, Output
5 pF
Current, Input, Leakage
±2.5 μA
Current, Operating
2 mA
Current, Output, Leakage
±2.5
Current, Supply
1.5⁄2.0 mA
Data Retention
>40 yrs.
Density
4K
Package Type
SO8
Temperature, Operating
-40 to +85 °C
Temperature, Operating, Maximum
85 °C
Temperature, Operating, Minimum
-40 °C
Time, Address Setup
50
Time, Fall
50 ns
Time, Rise
50 ns
Voltage, Esd
4000 V
Voltage, Input, High
3.5 to 6.5 V
Voltage, Input, High Level
0.7 V
Voltage, Input, Low
0.5 to 1.1 V
Voltage, Input, Low Level
–0.45 V
Voltage, Output, High
6 to 13.2 V
Voltage, Output, Low
0.4 V
Voltage, Supply
2.5 to 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8598-5
M93S66-WMN6P
Table 11. DC Characteristics (M93Sx6, Device Grade 6)
Note: 1. Current product: identified by Process Identification letter F or M.
Table 12. DC Characteristics (M93Sx6, Device Grade 3)
Note: 1. Current product: identified by Process Identification letter F or M.
Symbol
Symbol
I
V
I
V
V
V
V
V
I
I
V
I
I
V
CC1
CC1
I
I
CC
CC
LO
LO
OH
2. New product: identified by Process Identification letter W or G.
OH
2. New product: identified by Process Identification letter W or G.
LI
OL
LI
OL
IH
IH
IL
IL
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Stand-by)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Stand-by)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Parameter
Parameter
V
V
CC
V
CC
V
CC
CC
V
V
V
V
= 5V, S = V
= 5V, S = V
0V
0V
CC
CC
CC
CC
= 5V, S = V
= 5V, S = V
V
V
V
V
CC
CC
CC
CC
= 5V, S = V
= 5V, S = V
= 5V, S = V
= 5V, S = V
Current Product
Current Product
V
V
Test Condition
Test Condition
0V
V
V
0V
V
V
New Product
New Product
= 5V, I
= 5V, I
OUT
OUT
= 5V, I
= 5V, I
CC
CC
CC
CC
Product
Product
Product
Product
= 5V ± 10%
= 5V ± 10%
= 5V ± 10%
= 5V ± 10%
IH
IH
V
V
IH
IH
, f = 1 MHz, Current
OH
, f = 1 MHz, Current
OH
IN
IN
V
V
OL
OL
, f = 2 MHz, New
, f = 2 MHz, New
CC
CC
SS
SS
SS
SS
= –400µA
= –400µA
= 2.1mA
= 2.1mA
1
2
1
2
, Q in Hi-Z
, Q in Hi-Z
V
V
, C = V
, C = V
, C = V
, C = V
CC
CC
2
2
1
1
SS
SS
SS
SS
,
,
,
,
M93S66, M93S56, M93S46
–0.45
–0.45
Min.
Min.
2.4
2.4
2
2
V
V
Max.
CC
Max.
CC
±2.5
±2.5
±2.5
±2.5
1.5
0.8
0.4
1.5
0.8
0.4
50
15
50
15
2
2
+ 1
+ 1
Unit
Unit
19/34
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V

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