NAND128W3A0AN6F STMicroelectronics, NAND128W3A0AN6F Datasheet - Page 32
![IC FLASH 128MBIT 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
NAND128W3A0AN6F
Manufacturer Part Number
NAND128W3A0AN6F
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND128W3A2BN6E.pdf
(56 pages)
Specifications of NAND128W3A0AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
ble 14.
Table 14. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in
ble 15., Absolute Maximum
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
Table 15. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
32/56
Page Program Time
Block Erase Time
Program/Erase Cycles (per block)
Data Retention
Symbol
V
T
T
V
shoot to V
IO
BIAS
STG
DD
(1)
DD
Parameters
+ 2V for less than 20ns during transitions on I/O pins.
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Ratings, may cause
Parameter
Ta-
Ta-
100,000
1.8V devices
1.8V devices
3 V devices
3 V devices
Min
10
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
STMicroelectronics SURE Program and other rel-
evant quality documents.
NAND Flash
reliability.
Typ
200
2
– 0.6
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Value
Refer
Max
500
3
Max
125
150
2.7
4.6
2.7
4.6
also
cycles
to
years
Unit
ms
µs
Unit
°C
°C
V
V
V
V
the