NAND512W3A0AN6 STMicroelectronics, NAND512W3A0AN6 Datasheet - Page 22
![IC FLASH 512MBIT 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
NAND512W3A0AN6
Manufacturer Part Number
NAND512W3A0AN6
Description
IC FLASH 512MBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND128W3A2BN6E.pdf
(56 pages)
Specifications of NAND512W3A0AN6
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND512W3A0AN6
Manufacturer:
ST
Quantity:
106
Part Number:
NAND512W3A0AN6
Manufacturer:
ST
Quantity:
20 000
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 14. Read Block Diagrams
Note: 1. Highest address depends on device density.
Figure 15. Sequential Row Read Operations
Figure 16. Sequential Row Read Block Diagrams
22/56
A9-A26 (1)
A9-A26 (1)
Block
Block
RB
A0-A7
I/O
A0-A7
Read B Command, x8 Devices
Read A Command, x8 Devices
(1st half Page)
(1st half Page)
Area A
Area A
Command
Read B Command, X8 Devices
01h/ 50h
Read A Command, X8 Devices
(1st half Page)
(1st half Page)
Code
00h/
Area A
Area A
(2nd half Page)
(2nd half Page)
Address Inputs
(Read Busy time)
Area B
Area B
(2nd half Page)
(2nd half Page)
tBLBH1
Area B
Area B
(Spare)
(Spare)
Area C
Area C
Busy
(Spare)
(Spare)
Area C
Area C
1st page
1st page
2nd page
Nth page
2nd page
Nth page
Page Output
A9-A26 (1)
A0-A2 (x16)
1st
A0-A3 (x8)
tBLBH1
A9-A26 (1)
Block
Block
A0-A7
Read C Command, x8/x16 Devices
Busy
Read A Command, x16 Devices
Read C Command, X8/x16 Devices
Read A Command, X16 Devices
A4-A7 (x8), A3-A7 (x16) are don't care
Area A
Area A
Page Output
(main area)
2nd
Area A
(main area)
tBLBH1
Area A
Area A/ B
Area A/ B
Busy
(Spare)
Area C
(Spare)
Area C
(Spare)
Area C
(Spare)
Area C
Page Output
Nth
1st page
2nd page
Nth page
1st page
2nd page
Nth page
ai07597
AI07598
AI07596