M25P40-VMN6TPSO NUMONYX, M25P40-VMN6TPSO Datasheet - Page 36
![IC FLASH 4MBIT 50MHZ 8SOIC](/photos/7/28/72827/m25p40-vmn6tp_sml.jpg)
M25P40-VMN6TPSO
Manufacturer Part Number
M25P40-VMN6TPSO
Description
IC FLASH 4MBIT 50MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25P40-VMP6G.pdf
(61 pages)
Specifications of M25P40-VMN6TPSO
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P40-VMN6TPSOCT
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Figure 20. Power-up timing
Table 8.
1. These parameters are characterized only.
V CC (max)
Symbol
V CC (min)
t
t
V
PUW
VSL
WI
V WI
(1)
(1)
(1)
V CC
V
Time delay to Write instruction
Write Inhibit voltage (device grade 6)
Write Inhibit voltage (device grade 3)
Power-up timing and V
Reset State
CC
Device
of the
(min) to S low
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
Parameter
WI
threshold
tPUW
tVSL
Read Access allowed
Min.
10
1
1
1
Device fully
accessible
Max.
AI04009C
2.1
2.1
10
—
time
Unit
ms
µs
V
V
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