CY14B104N-BA20XCT Cypress Semiconductor Corp, CY14B104N-BA20XCT Datasheet - Page 11

• Manufacturer Part Number: CY14B104N-BA20XCT
• Description: IC NVSRAM 4MBIT 20NS 48TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B104N-BA20XCT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4M (256K x 16)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-07102 Rev. *L
Data Output
Data Input
BHE, BLE
Address
WE
CE
Figure 10. SRAM Write Cycle #3: BHE and BLE Controlled
Figure 9. SRAM Write Cycle #2: CE Controlled
t
SA
High Impedance
t
t
Address Valid
t
BW
PWE
SCE
t
WC
Input Data Valid
t
SD
[3, 17, 18, 19]
t
HD
CY14B104L, CY14B104N
t
HA
[3, 17, 18, 19]
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