MD4331-D1G-V3Q18-X-P/Y SanDisk, MD4331-D1G-V3Q18-X-P/Y Datasheet - Page 39
MD4331-D1G-V3Q18-X-P/Y
Manufacturer Part Number
MD4331-D1G-V3Q18-X-P/Y
Description
IC MDOC G3 1GB 69-FBGA
Manufacturer
SanDisk
Datasheet
1.MD4331-D1G-V3Q18-X-PY.pdf
(97 pages)
Specifications of MD4331-D1G-V3Q18-X-P/Y
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
585-1133
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MD4331-D1G-V3Q18-X-P/Y
Manufacturer:
SanDisk
Quantity:
10 000
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concurrently read or written if they have the same offset within their respective units, even if the
units are unaligned.
Bad units are mapped individually on each plane by enabling unaligned unit access, as shown in
Figure 14. Good units can therefore be aligned or unaligned, minimizing the effects of bad units on
the media. Without this capability, a bad unit in one plane would cause a good unit in the second
plane to be tagged as a bad unit, making it unusable. This customized method of bad unit handling
for two planes enhances data reliability without adversely affecting performance.
36
~ ~
Flash Plane 1
Good Unit
Good Unit
Good Unit
Good Unit
Good Unit
Good Unit
Bad Unit
Figure 14: Unaligned Multi-Plane Access
Preliminary Data Sheet, Rev. 1.1
~ ~
Aligned Unit
Aligned Unit
Aligned Unit
Aligned Unit
Aligned Unit
Internal Bus
~ ~
Flash Plane 2
Good Unit
Good Unit
Good Unit
Good Unit
Good Unit
Good Unit
Bad Unit
~ ~
Mobile DiskOnChip G3
91-SR-011-05-8L
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